GaAs/AlGaAs traveling-wave electro-optic modulators

Abstract
A GaAs/AlGaAs traveling wave Mach-Zehnder electro-optic modulator with novel slow wave electrodes was fabricated on undoped epitaxial layers. Using appropriate electrode engineering velocity matching with matched impedance and low microwave loss was achieved. Device had a measured electrical bandwidth greater than 40 GHz at 1.55 micrometer. The measured bandwidth at 1.3 micrometer was 37 GHz. The mechanism limiting the bandwidth was identified as phase velocity matching rather than group velocity matching.

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