Transport Properties of Two Quantum Dots Connected in Series Formed in Silicon Inversion Layers
- 1 April 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (4A) , L418-420
- https://doi.org/10.1143/jjap.35.l418
Abstract
We have studied the transport properties over a range of temperatures of two quantum dots connected in series formed in silicon inversion layers. The inter-dot interaction as well as the electron number can be changed by means of the field effect in our device. For weak inter-dot interactions, the device shows a periodic current oscillation and a biquadratic temperature-dependent current due to co-tunneling. On increasing the inter-dot interaction, we have observed splitting of peaks and estimated the typical inter-dot capacitance to be 1.3×10-18 F.Keywords
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