TheX-Ray Absorption Edge of Silicon
- 1 April 1947
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 71 (7) , 406-408
- https://doi.org/10.1103/physrev.71.406
Abstract
The absorption edge of silicon was measured in silicon metal and in the following compounds: quartz, sodium silicate, muscovite, biotite, phlogopite, lepidolite, carborundum, and an organic compound, mono ethyl siloxane. It was found that the quartz, sodium silicate, and the four micas all gave approximately the same wave-length for the absorption edge, namely, about 6700 x.u., while for the siloxane the value was 6706 x.u., and for the silicon metal and for carborundum it rose as high as 6718 x.u. It is to be noted that the surroundings of the silicon atom are the same for all those compounds which gave an edge at 6700 x.u. In the organic compound one oxygen has probably been replaced by the group , while for carborundum and for silicon metal all four oxygens of the tetrahedral group surrounding the silicon atom have been replaced by carbon and by silicon, respectively.
Keywords
This publication has 3 references indexed in Scilit:
- Fine Structure of K-Absorption Limit of Silicon OxideNature, 1930
- Über dieK-Röntgenabsorptionsspektra der Elemente Si, Ti, V, Cr, Mn und FeZeitschrift für Physik, 1925
- The K-Characteristic Absorption Frequencies for the Chemical Elements Magnesium to ChromiumPhysical Review B, 1920