Low frequency noise in two-dimensional metal-semiconductor field effect transistor
- 27 May 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (22) , 3138-3140
- https://doi.org/10.1063/1.115803
Abstract
Low frequency noise in the two‐dimensional metal‐semiconductor field effect transistor (2D‐MESFET) is reported. It is shown that the noise level S is rather small. At room temperature the value of Hooge constant α was about 2×10−5 for frequency f=20 Hz. The frequency dependence of the relative spectral density of current fluctuations SI/I2 at 300 K was close to S∼1/f0.6 in the frequency range 20 Hz–20 kHz. Two local maxima were observed in the temperature dependence of S in the ranges 100–180 K and 200–300 K.Keywords
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