Large scale, high efficiency GaAs/Ge cell production
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The status of GaAs/Gei (inactive germanium) solar cells is described. Production cells have shown increased efficiency, ruggedness, and other operating advantages. Production acceptance was accelerated by validation of a cell design in which the GaAs/Ge interface was rendered inactive. It was successfully demonstrated that by replacing the expensive GaAs substrates with the lower-cost Ge substrates, lot average AM0 efficiency at a load voltage, of 825 mV approaching 18% can be achieved for 4 cm*2 cm solar cells in a large-scale production environment. By changing to 2 cm*4 cm, the projected lot average AM0 efficiency at maximum power point should be approaching 19%. The best AM0 efficiency at a load voltage of 825 mV for production 4 cm*2 cm solar cells is about 19%. The projected 2 cm*4 cm GaAs/Gei solar cell AM0 efficiency at maximum power point approaches 20%, very close to a reported R&D 2 cm*2 cm cell value of 20.5%. Concurrent work is adapting the cells to give higher efficiency and to form larger, thinner cells.Keywords
This publication has 3 references indexed in Scilit:
- Large area space solar cells-Si or GaAsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-efficiency (>20% AM0) GaAs solar cells grown on inactive-Ge substratesIEEE Electron Device Letters, 1990
- High volume production of rugged, high efficiency GaAs/Ge solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988