The Preparation and Properties of GaAs-InAs Mixed Crystals
- 1 January 1965
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 112 (3) , 300-302
- https://doi.org/10.1149/1.2423527
Abstract
Mixed crystals of have been prepared by a halogen vapor transport method. The entire composition range was covered and electroluminescent diodes were made. The dependence of emission energy at 77°K on composition was determined. Conditions were determined for the epitaxial deposition of mixed crystal layers on pure needs. A halogen‐flow system was used, and liquid Ga‐In solutions were used in the source. It was discovered that considerable fractionation occurred in the deposition reaction.Keywords
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