Band-structure dependence of impact ionization rate in GaAs
- 1 April 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (7) , 2595-2596
- https://doi.org/10.1063/1.337011
Abstract
The band‐structure dependence of the electron impact ionization rate in GaAs is studied by using local and nonlocal pseudopotential band structures and a Monte Carlo simulation code for the impact ionization rate α. We find that the difference in α for the two band structures reflects mainly the difference in the density of states.This publication has 9 references indexed in Scilit:
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