Pulse-shape effects on frequency chirping in single-frequency semiconductor lasers under current modulation
- 1 May 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 4 (5) , 497-503
- https://doi.org/10.1109/jlt.1986.1074748
Abstract
Directly modulated semiconductor lasers exhibit dynamic frequency shifts (chirping) due to gain-induced variations of the refractive index. Using the small-signal analysis of the single-mode rate equations, the effect of current-pulse shape on frequency chirping is analyzed, and the results are compared for the cases of sinusoidal and square-wave modulations. The chirp is generally larger for the square-wave case. However, its magnitude depends on the pulse rise and fall times, decreasing for a pulse with slower turn-on and turn-off characteristics. Chirp analysis presented here includes the effect of power-dependent gain changes arising from the processes such as spectral hole-burning.Keywords
This publication has 15 references indexed in Scilit:
- Modulation induced transient chirping in single frequency lasersIEEE Journal of Quantum Electronics, 1985
- Power spectrum of directly modulated single-mode semiconductor lasers: Chirp-induced fine structureIEEE Journal of Quantum Electronics, 1985
- Reduction of laser chirp in 1.5 μm DFB lasers by modulation pulse shapingElectronics Letters, 1985
- Reduction of dynamic linewidth in single-frequency semiconductor lasersElectronics Letters, 1984
- Frequency chirp under current modulaton in InGaAsP injection lasersJournal of Applied Physics, 1984
- Effect of laser chirp on optical systems—initial tests using a 1480 nm DFB laserElectronics Letters, 1984
- Transient chirping in single-frequency lasers: lightwave systems consequencesElectronics Letters, 1984
- Theory of the phase noise and power spectrum of a single mode injection laserIEEE Journal of Quantum Electronics, 1983
- Direct frequency modulation in AlGaAs semiconductor lasersIEEE Journal of Quantum Electronics, 1982
- Wavelength variation of 1.6 µm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulationIEEE Journal of Quantum Electronics, 1982