Hydrogen-Free Plasma-Enhanced Chemical Vapor Deposition of Silicon Dioxide Using Tetra-isocyanate-silane (Si(NCO) 4)
- 1 June 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (6B) , L772
- https://doi.org/10.1143/jjap.34.l772
Abstract
Deposition of silicon dioxide by plasma-enhanced chemical vapor deposition (PECVD) technique using tetra-isocyanate-silane (Si(NCO)4 : TICS) and oxygen for interlayer dielectric film application is proposed. Film properties strongly depend on the gas composition. The film which was deposited under an oxygen-rich condition was water-free after deposition. The film density, refractive index, resistivity, and dielectric constant were 2.3 g/cm3, 1.46, 5×1014 Ω·cm, and 3.6, respectively. The etch rate by buffered HF was 330 nm/min.Keywords
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