Zone-melting recrystallization of polycrystalline silicon films on fused silica substrates using RF-Heated carbon susceptor

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Abstract
High-quality recrystallized silicon films on fused silica substrates have been produced with a new micro-zone-melting method using an RF-heated carbon susceptor. In this method, the fused silica substrate, on which a 0.5-1.0-µm-thick polycrystalline silicon film encapsulated with a 1.2-µm-thick CVD-SiO2layer has been deposited, is moved across the carbon susceptor surface, which has a narrow-strip high-temperature zone. Recrystallized silicon films with