Effects of radiation on microelectronics and techniques for hardening
- 1 April 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 40-41, 1291-1294
- https://doi.org/10.1016/0168-583x(89)90642-3
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS TransistorsIEEE Transactions on Nuclear Science, 1987
- Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance TestingIEEE Transactions on Nuclear Science, 1986
- CMOS Scaling Implications for Total Dose RadiationIEEE Transactions on Nuclear Science, 1985
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- Radiation-Hard Design Principles Utilized in CMOS 8085 Microprocessor FamilyIEEE Transactions on Nuclear Science, 1983
- The Effects of Test Conditions on MOS Radiation-Hardness ResultsIEEE Transactions on Nuclear Science, 1981
- Photon Energy Dependence of Radiation Effects in MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Alpha-particle-induced soft errors in dynamic memoriesIEEE Transactions on Electron Devices, 1979
- Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS CapacitorsIEEE Transactions on Nuclear Science, 1977
- Process Optimization of Radiation-Hardened CMOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1975