80-MW photoconductor power switch
- 15 May 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (10) , 980-982
- https://doi.org/10.1063/1.94619
Abstract
The application of photoconductors to fast rise time, high-power switching is discussed. We report the successful switching of a 100-kV system to generate a 1.8-kA, <5-ns rise time, 200-ns duration electrical pulse in a 25-Ω load using a single photoconductor switch excited by a Q-switched Nd: glass laser. The photoconductor was a 2.5-cm-long bar of single-crystal, high-resistivity silicon with a 0.5×0.5 cm cross section. Only a depth of about 1 mm of one side was used for conduction.Keywords
This publication has 4 references indexed in Scilit:
- High-power switching with picosecond precisionApplied Physics Letters, 1979
- Picosecond optoelectronic switching in GaAsApplied Physics Letters, 1977
- A kilovolt picosecond optoelectronic switch and Pockel’s cellApplied Physics Letters, 1976
- Picosecond optoelectronic switching and gating in siliconApplied Physics Letters, 1975