Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemical Vapor Deposition
- 1 January 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (1A) , L7
- https://doi.org/10.1143/jjap.30.l7
Abstract
The influence of nitrogen incorporation in a-Si:H films by mercury-photosensitized decomposition of a silaneammonia gas mixture was investigated. It was found that there are two different film structures of a-Si:H films. In a high nitrogen concentration, nitrogen is one of the elements of the a-SiN x alloy. On the other hand, in a low nitrogen concentration, nitrogen plays the role of a dopant in a-Si:H, and nitrogen-induced localized states are created at around 0.5 eV above the valence band edge.Keywords
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