The Distribution of Current and Formation of a Salt Film on an Iron Disk below the Passivation Potential

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Abstract
The generation of centers by negative corona charging has been examined by electron spin resonance (ESR). Formation of centers has been found to saturate in about 25s. The corona‐generation effect is maximized for samples oxidized in ambients containing about 0.1% , and disappears with dry or steam‐grown oxides. Mild postoxidation anneals can also generate in these samples, and the activation energy for this thermal generation is lowest for samples showing the corona effect. Prolonged anneals have been found to passivate existing and, ultimately, to produce an interface that is very resistant to corona depassivation. It is proposed that the generation is due to weakening of the interface Si‒H bond by attraction of a hole from the Si bulk in the negative field, followed by prompt abstraction and capture of a proton by a nearby molecule to yield and . Capacitance‐voltage curves show flatband shifts and stretchout, which indicate the generation of positive oxide charge and interface states. A converse fast depassivation reaction under positive corona stress was not observed in the absence of added stimulus by radiation or electron injection.

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