Analysis of the planar transistor at medium and high injection levels
- 1 January 1968
- journal article
- Published by Springer Nature in Russian Physics Journal
- Vol. 8 (5) , 115-120
- https://doi.org/10.1007/bf00868564
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- A theory of the effects of carrier-carrier scattering on mobility in semiconductorsJournal of Physics and Chemistry of Solids, 1960
- On the Lifetime and Diffusion Constant of the Injected Carriers and the Emitter Efficiency of a Junction Transistor†Journal of Electronics and Control, 1958
- On the Variation of Transistor Small-Signal Parameters with Emitter Current and Collector Voltage†Journal of Electronics and Control, 1958
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Effects of Space-Charge Layer Widening in Junction TransistorsProceedings of the IRE, 1952