Domain-wall behavior in ion-implanted garnet layers for 1-μm bubble devices

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Abstract
Bitter pattern observations are reported on domain walls in ion‐implanted garnet layers. Particular attention is given to the behavior of charged walls at the edge of nonimplanted disks and other elements and on the response of these walls to varying in‐plane fields. The interaction between bubbles and charged walls has been observed and the propagation of bubbles around disks and along propagation tracks has been examined. The crystalline symmetry of the garnet layer has been found to give rise to significant orientation effects on the response of walls to external fields. From a study of wall behavior certain characteristics of bubble motion along propagation paths can be explained.