A physically based C/sub ∞/-continuous model for small-geometry MOSFET's
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (2) , 283-287
- https://doi.org/10.1109/16.370068
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A generalized tanh law MOSFET model and its applications to CMOS invertersIEEE Journal of Solid-State Circuits, 1993
- Unified MOSFET modelSolid-State Electronics, 1992
- An improved analytical short-channel MOSFET model valid in all regions of operating for analog/digital circuit simulationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1992
- An enhanced SPICE MOSFET model suitable for analog applicationsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1992
- Fast simulated diffusion: an optimization algorithm for multiminimum problems and its application to MOSFET model parameter extractionIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1992
- A single-piece C/sub infinity /-continuous MOSFET model including subthreshold conductionIEEE Electron Device Letters, 1991
- A charge sheet capacitance model of short channel MOSFETs for SPICEIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991
- Physically-based method for measuring the threshold voltage of MOSFETsIEE Proceedings G Circuits, Devices and Systems, 1991
- BSIM: Berkeley short-channel IGFET model for MOS transistorsIEEE Journal of Solid-State Circuits, 1987