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Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon
Home
Publications
Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon
Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon
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Martin G Buehler
Martin G Buehler
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1 January 1976
report
Published by
National Institute of Standards and Technology (NIST)
https://doi.org/10.6028/nbs.sp.400-22
Abstract
No abstract available
Cited
Cited by 3 articles
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