Injection control of a multipass amplification of a discharge excited XeF (C to A) laser
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (5) , 827-832
- https://doi.org/10.1109/3.199
Abstract
The laser performance and kinetic properties of the broadband C to A transition of the XeF*-exciplex have been studied under discharge excitation. With a pulsed dye laser as the injection source, amplified output pulses with an energy of up to 4 mJ have been obtained in the wavelength range from 450 to 520 nm. Injection of a well-defined seed pulse in an unstable confocal cavity has been developed into a useful technique for identification of subtle kinetic details of the complicated lasing process in XeF*, such as the role of the competitive narrow-band B to X transition or the influence of the various buffer gases.Keywords
This publication has 20 references indexed in Scilit:
- Injection-controlled tuning of an electron-beam excited XeF (C→A) laserIEEE Journal of Quantum Electronics, 1986
- Synthesis of rare gas-halide mixtures resulting in efficient XeF(C→A) laser oscillationApplied Physics Letters, 1984
- Efficient XeF(C→A) laser oscillation using electron-beam excitationJournal of Applied Physics, 1984
- Optimization of electrically excited XeF(C→A) laser performanceApplied Physics Letters, 1983
- XeF2 photodissociation studies. I. Quantum yields and kinetics of XeF(B) and XeF(C)The Journal of Chemical Physics, 1981
- XeF(C) state lifetime and quenching by rare gases and fluorine donorsApplied Physics Letters, 1980
- Multipass amplification and tuning of the blue-green XeF C→A laserApplied Physics Letters, 1979
- The role of the C state in the XeF laserApplied Physics Letters, 1979
- Transfer and quenching rate constants for XeF(III,1/2) and XeF(II,3/2)Applied Physics Letters, 1978
- Efficient electric discharge lasers in XeF and KrFApplied Physics Letters, 1976