Consideration of the frequency performance potential of GaAs homojunction and heterojunction n-p-n transistors

1 October 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (10) , 1289-1294
https://doi.org/10.1109/T-ED.1983.21289

Abstract

A study is made of the expected frequency performance of n-p-n GaAs homojunction transistors and n-p-n AlGaAs-GaAs heterojunction transistors. The analysis suggests that if parasitic base resistance is minimized in the homojunction transistor design, the frequency performance should be comparable to that of heterojunction transistors of similar dimensions.

Keywords

DOPING
FREQUENCY RESPONSE
GALLIUM ARSENIDE
BIPOLAR TRANSISTORS
HETEROJUNCTIONS
OSCILLATIONS
CONTACT RESISTANCE

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