Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface
- 1 May 1995
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (9) , 4746-4749
- https://doi.org/10.1063/1.359410
Abstract
Using x‐ray diffraction techniques, we measure the root‐mean‐square width of the buried crystalline/amorphous Si(001)/SiO2 interface, as a function of oxide thickness. We find that the interface width decreases with increasing oxide thickness; the oxide growth process kinetically smoothens the buried interface. We also find a difference between the rate of smoothing for wet and dry oxides.This publication has 3 references indexed in Scilit:
- Roughness of the silicon (001)/SiO2 interfaceApplied Physics Letters, 1993
- Dynamic Scaling of Growing InterfacesPhysical Review Letters, 1986
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980