A study of high-speed avalanche transistors
- 1 July 1957
- journal article
- Published by Institution of Engineering and Technology (IET) in Proceedings of the IEE - Part B: Radio and Electronic Engineering
- Vol. 104 (16) , 394-402
- https://doi.org/10.1049/pi-b-1.1957.0177
Abstract
The discovery of an extremely fast relaxation oscillation in a junction transistor led to a study of this mode of operation. It was found that the high speed of operation was due to a combination of multiplication and punch-through.The paper describes the static and dynamic properties of transistors which operate in this mode, and discusses the design and application of such transistors.Keywords
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