Extremely low-threshold 1.3 μm GaInAsP/InP DFB PPIBH laser

• 24 November 1988
• journal article
• Published by Institution of Engineering and Technology (IET) in Electronics Letters
• Vol. 24  (24) , 1508-1510
• https://doi.org/10.1049/el:19881030

Abstract

Keywords

• 1.3 MICRON
• DFB LASERS
• SIDE MODE SUPPRESSION RATIO
• SEMICONDUCTORS
• LOW-THRESHOLD-CURRENT
• ROOM TEMPERATURE
• P-SUBSTRATE PARTIALLY INVERTED BURIED HETEROSTRUCTURE LASERS
• GAINASP-INP
• MOCVD
• 3.1 MA
• 1 MW
• CW THRESHOLD
• LPE