GaAs FETs having high output power per unit gate width

1 June 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (6) , 147-148
https://doi.org/10.1109/EDL.1981.25376

Abstract

GaAs power FETs with output powers per unit gate width up to 1.4 W/mm have been fabricated. The factors contributing to this high output power are discussed.

Keywords

GALLIUM ARSENIDE
POWER GENERATION
DOPING
VOLTAGE
GAIN
MICROWAVE FETS
LABORATORIES
TESTING
FREQUENCY
INDIUM PHOSPHIDE