High throughput electron lithography for integrated optoelectronic grating structures
- 30 April 1990
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 11 (1-4) , 375-378
- https://doi.org/10.1016/0167-9317(90)90134-f
Abstract
No abstract availableKeywords
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- Fabrication of first-order gratings for 1.5 μm DFB lasers by high-voltage electron-beam lithographyElectronics Letters, 1987
- Poly(3-Butenyltrimethylsilane Sulfone): A Sensitive Positive Electron-Beam Resist For Two-Layer SystemsPublished by SPIE-Intl Soc Optical Eng ,1986