Focused ion beams for lithography and direct doping in VLSI device fabrication
- 31 December 1986
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 4 (4) , 233-249
- https://doi.org/10.1016/0167-9317(86)90016-x
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Integrated circuit repair using focused ion beam millingJournal of Vacuum Science & Technology B, 1986
- The focused ion beam as an integrated circuit restructuring toolJournal of Vacuum Science & Technology B, 1986
- Integrated circuit diagnosis using focused ion beamsJournal of Vacuum Science & Technology B, 1986
- Application of a focused ion beam system to defect repair of VLSI masksJournal of Vacuum Science & Technology B, 1985
- 100 keV focused ion beam system with a E×B mass filter for maskless ion implantationJournal of Vacuum Science & Technology B, 1983
- Ion channeling effects in scanning ion microscopy with a 60 keV Ga+ probeNuclear Instruments and Methods in Physics Research, 1983
- A mass-separating focused-ion-beam system for maskless ion implantationJournal of Vacuum Science and Technology, 1981
- A 100-kV ion probe microfabrication system with a tetrode gunJournal of Vacuum Science and Technology, 1981
- Optical column design with liquid metal ion sourcesJournal of Vacuum Science and Technology, 1981
- A high-intensity scanning ion probe with submicrometer spot sizeApplied Physics Letters, 1979