Advanced technologies of low-power GaAs ICs and power modules for cellular telephones
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 131-134
- https://doi.org/10.1109/gaas.1992.247207
Abstract
Low-power GaAs ICs and power modules have been developed for 150-cc-type cellular telephones. The front-end IC and power splitter IC can operate under 3 V, and the dissipation current is only half that of Si bipolar ICs. The front-end IC, consisting of a low-noise amplifier, local amplifier, and downconverter, shows a conversion gain of 22 dB at a local power of -15 dBm. The power splitter IC, used in dividing the output power of the voltage-controlled oscillator and supplying the local power to two mixers, shows an output power of 0 dBm and internal isolation of over 25 dB. The power module as a transmitter, composed of a two-stage hybrid amplifier using GaAs MESFETs, can operate at 4.7 V and deliver an output power of 1.5 W at f=950 MHz.<>Keywords
This publication has 1 reference indexed in Scilit:
- High K-value LDD GaAs MESFET's with SiF/sub 3/-implanted shallow channelsIEEE Transactions on Electron Devices, 1990