Photonic and Electronic Device Technologies
- 2 January 1989
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in AT&T Technical Journal
- Vol. 68 (1) , 2-4
- https://doi.org/10.1002/j.1538-7305.1989.tb00641.x
Abstract
In the past year, AT&T has put into service the FT Series G lightwave system. Operating at 1.7 gigabits per second, it is the world's fastest telecommunications system in commercial service. The system uses the latest InP-based (indium phosphide) photonic devices and GaAs-based (gallium arsenide) electronic devices. These compound semiconductor devices have a major role in digitizing the nationwide network and bringing new services to business and residential customers. This issue of the AT&T Technical Journal is devoted to the technologies on which these advanced photonic and electronic devices are based.Keywords
This publication has 2 references indexed in Scilit:
- III-V Device Technologies for Electronic ApplicationsAT&T Technical Journal, 1989
- III-V Device Technologies for Lightwave ApplicationsAT&T Technical Journal, 1989