Pseudomorphic GaInP Schottky diode and MSM detector on InP

29 March 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (7) , 487-488
https://doi.org/10.1049/el:19900316

Abstract

A high gap pseudomorphic GaInP material is used to enhance the Schottky barrier height of InP. This material leads to a Schottky diode with a barrier height of 0.8 eV, with ideality factor close to one and breakdown voltages of 200 V on undoped n type material. This diode is used to fabricate a MSM detector on InP. The device of 4 × 4 μm fingers and 40 μm² active surface presents a risetime of 74 ps and a FWHM of 183 ps.

Keywords

4 MICRON
SCHOTTKY BARRIER HEIGHT
AU-GAINP-INP
RISETIME
0.8 EV
IDEALITY FACTOR
BREAKDOWN VOLTAGES
MSM DETECTOR
HIGH GAP PSEUDOMORPHIC GAINP MATERIAL
74 PS
PSEUDOMORPHIC GAINP SCHOTTKY DIODE
200 V
183 PS
BARRIER HEIGHT
FWHM

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