SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 847-851
- https://doi.org/10.1016/0168-583x(91)96291-r
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Surface morphology of oxygen-implanted wafersJournal of Materials Research, 1990
- A high current, high voltage oxygen ion implanterNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealingApplied Physics Letters, 1986
- Temperature measurement technique using Pt diffusion into Au for ion-implanting wafers mounted on a spinning discElectronics Letters, 1985
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978