A simple method to characterize substrate current in MOSFET's
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (12) , 505-507
- https://doi.org/10.1109/edl.1984.26006
Abstract
Experimental verification of substrate current characteristics is thoroughly carried out. VDS- VDSAT, instead of VDS, is shown to be the driving force of all hot-electron effects. A simple relationship between substrate current and VDS- VDSATis found. This relationship provides a convenient tool to characterize the substrate current or the channel electric field, and, hence, all hot-electron effects. Measurements of ISUB/IDand VDS- VDSATat two bias points and any one channel length are sufficient to fully characterize the substrate currents for all channel lengths VDS's and VG's for a given technology.Keywords
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