20 Gbit/s transimpedance preamplifier and modulatordriver in SiGe bipolar technology
- 19 June 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (13) , 1136-1137
- https://doi.org/10.1049/el:19970791
Abstract
A transimpedance preamplifier and a modulator driver used in a 20 Gbit/s fibre-optic TDM transmission system are presented. The ICs were fabricated in an advanced SiGe bipolar technology. The amplifier is noted for its high gain (58 dBΩ) and low equivalent input noise current density (≃ 12 pA/√Hz) and the driver for its high output voltage swing (2.3 V single-ended, 4.6 V differential).Keywords
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