Transition metal doping of LP-MOCVD-grown InP
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 381-385
- https://doi.org/10.1016/0022-0248(91)90490-v
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Zinc-stimulated outdiffusion of iron in InPApplied Physics Letters, 1990
- High-power and high-speed 1.3 μm V-grooved inner-stripe lasers with new semi-insulating current confinement structures on p-InP substratesApplied Physics Letters, 1989
- Properties of InP doped with 4d ionsSemiconductor Science and Technology, 1987
- Growth of double doped semi-insulating indium phosphide single crystalsJournal of Crystal Growth, 1987
- MOVPE growth and characteristics of Fe-doped semi-insulating InP layersElectronics Letters, 1986
- Titanium-doped semi-insulating InP grown by the liquid encapsulated Czochralski methodApplied Physics Letters, 1986
- New semi-insulating InP: Titanium midgap donorsApplied Physics Letters, 1986
- Growth of Fe-doped semi-insulating InP by MOCVDJournal of Crystal Growth, 1984
- Evaluation of a cesium positive ion source for secondary ion mass spectrometryAnalytical Chemistry, 1977