High-performance 450-GHz GaAs-based heterostructure barrier varactor tripler
- 5 June 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (3) , 138-140
- https://doi.org/10.1109/led.2003.809042
Abstract
In this letter, we report on the record performance of GaAs-based heterostructure barrier varactors (HBVs) in tripler circuits. Both fabrication technique of planar Al/sub 0.7/Ga/sub 0.3/As/GaAs heterostructure barrier varactors (HBVs) and measurements of a corresponding tripler circuit are presented. Planar transmission lines on a thin dielectric membrane and flip-chip technique without air bridges provide reduced parasitic losses and, hence, higher tripler efficiency. Frequency tripler measurements have shown more than 1 mW at 450 GHz.Keywords
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