Polarity dependence of thin oxide wearout
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Stress voltage polarity dependence of thermally grown thin gate oxide wearoutIEEE Transactions on Electron Devices, 1988
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985