On the interpretation of the RHEED intensity oscillations during the growth of vicinal faces
- 1 March 1990
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 50 (3) , 349-352
- https://doi.org/10.1007/bf00324505
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- A direction of easy diffusion on the (001) face of Ge, Si and III-V semiconductor crystals — How to verify its existence?Journal of Crystal Growth, 1989
- Layer growth of epitaxial films and superlatticesSurface Science, 1988
- Non-steady state effects in MBE: Oscillations of the step density at the crystal surfaceSurface Science, 1988
- Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAsJapanese Journal of Applied Physics, 1988
- The surface morphology of a growing crystal studied by thermal energy atom scattering (TEAS)Surface Science, 1987
- Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBEJournal of Crystal Growth, 1987
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- On the atomistic theory of nucleation rateThin Solid Films, 1973
- Nucleation kinetics of gold deposition onto UHV cleaved surfaces of KCl and NaFThin Solid Films, 1970
- Nucleation of Vapor DepositsThe Journal of Chemical Physics, 1962