Electrical properties of Au-Cu-doped Si Schottky diode

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Abstract
Current-voltage measurement and photoelectric measurement were carried out in copper-doped silicon Schottky diode. Although the current of Schottky diode varies remarkably with copper diffusion temperature, it is found out that the variation of current takes a maximum and a minimum at diffusion temperatures of about 1000 and 1100 °C, respectively. Such variation of current exceedingly corresponds well to that of the lattice strain of copper-doped silicon crystal which has been revealed by x-ray measurement. It is also shown that the saturation current and the shunt resistance of Schottky diode can be obtained by photoelectric measurement even in a sample which has a large excess current component, viz., a larger n value than unity. As a result, it is found out that the effective Richardson constant and the shunt resistance are changed mainly by the lattice strain due to copper introduction.

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