Configuration coordinate diagram for the E4 defect in electron-irradiated GaP

Abstract
The electronic properties of the defect E4 generated in GaP by 1‐MeV electron irradiation have been studied. The defect exhibits very strong athermal annealing effects under eh recombination conditions. By comparing thermal and optical data evidence is obtained for lattice relaxation when the charge state of the E4 defect is changed. A simple configuration coordinate diagram is presented which is in agreement with experimental data and which explains several important features of recombination‐enhanced defects reactions and athermal annealing phenomena.