Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb
- 15 February 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (8) , 5826-5831
- https://doi.org/10.1103/physrevb.59.5826
Abstract
We have investigated the magnetic and transport properties of (In,Mn)As thin films grown on a (Ga,Al)Sb layer. Strong perpendicular magnetic anisotropy is observed for the (In,Mn)As layer, the thickness of which is less than the critical value required for relaxation of lattice-mismatch-induced strain. The anomalous Hall coefficient is found to be approximately proportional to the square of resistivity in the low-field region. Large negative magnetoresistance is found to occur over a magnetic field range significantly wider than that for the ferromagnetic hysteresis loop.Keywords
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