5-60 GHz high-gain distributed amplifier utilizing InP cascode HEMTs
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 319-322
- https://doi.org/10.1109/gaas.1991.172703
Abstract
A high-gain InP MMIC (monolithic microwave integrated circuit) cascode distributed amplifier has been developed which has 12 dB of gain from 5 to 60 GHz with over 20 dB gain control capability and a noise figure of 2.5-4 dB in the Ka-band. Lattice-matched InAlAs-InGaAs cascode HEMTs (high electron mobility transistor) on InP with 0.25 mu m gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimensions of 2.3 by 0.9 mm/sup 2/.Keywords
This publication has 4 references indexed in Scilit:
- 94 GHz InP MMIC five-section distributed amplifierElectronics Letters, 1990
- Microwave InAlAs/InGaAs/InP HEMTs: status and applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- 5-100 GHz InP coplanar waveguide MMIC distributed amplifierIEEE Transactions on Microwave Theory and Techniques, 1990
- HEMT millimetre wave monolithic amplifier on InPElectronics Letters, 1989