Metal-oxide-semiconductor field-effect transistor characteristics as influenced by carrier mobility variation along the channel
- 15 October 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (8) , 3606-3609
- https://doi.org/10.1063/1.352301
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Scaling silicon MOSFET's for 77 K operationIEEE Transactions on Electron Devices, 1991
- Unified field-effect transistor theory including velocity saturationIEEE Journal of Solid-State Circuits, 1980
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- Characteristics of the metal-Oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1964
- A Unipolar "Field-Effect" TransistorProceedings of the IRE, 1952