Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing
- 1 February 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 37 (7) , 605-608
- https://doi.org/10.1016/0038-1098(81)90144-7
Abstract
No abstract availableKeywords
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