High-speed, monolithic CMOS receivers at 1550nm with Ge on Si waveguide photodetectors

1 October 2007

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10928081,p. 848-849
https://doi.org/10.1109/leos.2007.4382674

Abstract

This talk discusses the technological challenges arising from the insertion of a Ge photodetectors step in a CMOS process and the advantages brought by monolithic integration.

Keywords

PHOTODETECTORS
OPTICAL WAVEGUIDES
OPTICAL RECEIVERS
CMOS PROCESS
OPTICAL SENSORS
HIGH SPEED OPTICAL TECHNIQUES
INTEGRATED OPTICS
TESTING
OPTICAL FILTERS
TRANSCEIVERS

This publication has 2 references indexed in Scilit:

CMOS Photonics for High-Speed Interconnects
IEEE Micro, 2006
High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration
IEEE Transactions on Electron Devices, 2001