Comments, with reply, on 'A new approach to optimizing the base profile for high-speed bipolar transistors' by P.J. Van Wijnen and R.D. Gardner
- 1 February 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (2) , 81-82
- https://doi.org/10.1109/55.75711
Abstract
The commenter claims that the fundamental approach of P.J. Van Wijnen and R.D. Gardner in the above-mentioned work (see ibid., vol.11, p.149-52, Apr. 1990) has already been proposed in L.J. Varnerin (Proc. IRE, vol.47, p.523-7, Apr. 1959). It is further claimed that the results shown in Varnerin regarding this approach to optimizing the base doping profile for maximum f/sub T/ are more general than those of Van Wijnen and Gardner, and lead to different conclusions regarding the optimum base doping profile. In a rely, the original authors admit they were unaware of the work of Varnerin, and offer some specific responses to the commenter's points.Keywords
This publication has 2 references indexed in Scilit:
- A new approach to optimizing the base profile for high-speed bipolar transistorsIEEE Electron Device Letters, 1990
- Stored Charge Method of Transistor Base Transit AnalysisProceedings of the IRE, 1959