Reduced dimensionality of hot-carrier relaxation in GaAs quantum wells
- 15 April 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (12) , 7121-7124
- https://doi.org/10.1103/physrevb.37.7121
Abstract
Cooling of hot electron-hole plasmas in GaAs/ As quantum wells of varying width is investigated by picosecond luminescence spectroscopy. The energy loss via Fröhlich interaction is at low plasma density independent of dimensionality and well width and close to theoretical expectation; its rate decreases sharply with increasing excitation density. Areal excitation density, rather than volume density, is shown to be the relevant variable, which indicates reduction of phase-space dimension for the coupled carrier-phonon system.
Keywords
This publication has 20 references indexed in Scilit:
- Heating of cold electrons by a warm GaAs lattice: A novel probe of the carrier-phonon interactionPhysical Review B, 1987
- Hot carriers in quasi-2-D polar semiconductorsIEEE Journal of Quantum Electronics, 1986
- Spectroscopy of hot carriers in semiconductorsJournal of Luminescence, 1986
- Hot phonon effects in heterolayersPhysica B+C, 1985
- On the scattering of electrons by polar optical phonons in quasi-2D quantum wellsJournal of Physics C: Solid State Physics, 1983
- Electronic power transfer in pulsed laser excitation of polar semiconductorsPhysical Review B, 1983
- The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structuresJournal of Physics C: Solid State Physics, 1982
- Two-dimensional electron transport in semiconductor layers. I. Phonon scatteringAnnals of Physics, 1981
- Impurity and phonon scattering in layered structuresApplied Physics Letters, 1979
- Scattering by polar-optical phonons in a quasi-two-dimensional semiconductorSurface Science, 1978