Enhanced low temperature diffusion of electron-beam evaporated aluminium into SiO 2 thin films
- 21 January 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (2) , 74-75
- https://doi.org/10.1049/el:19820051
Abstract
Aluminium-gate MOS capacitors are annealed at low temperatures. The consequent aluminium penetration into the underlying oxide is revealed by ion probing. Results indicate that penetration is enhanced when the aluminium is evaporated using an electron beam.Keywords
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