Gate-workfunction engineering using poly-(Si,Ge) for high-performance 0.18 μm CMOS technology
- 1 December 1997
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We show that poly-SiGe can be readily integrated as a gate material into an existing CMOS technology to achieve significant increase in the transistor performance. In order to preserve the standard salicidation scheme, a buffer poly-Si layer is introduced in the gate stack. PMOST channel profiles are optimized to account for the change of the gate workfunction. High-performance CMOS 0.18 µm devices are manufactured using p- and n-type poly-Si/Si0.8Ge 0.2 gateKeywords
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