Non-Destructive Determination of Cr Concentration Distribution in Cr Doped Semi-Insulating GaAs Substrates
- 1 December 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (12A) , L786-788
- https://doi.org/10.1143/jjap.21.l786
Abstract
Non-destructive determination of Cr concentration distribution in Cr doped semi-insulating GaAs substrates is described. Substrate conductance change Δ G caused by light illumination, which is known to be correlated with the Cr concentration in the substrate, is determined by the use of a microwave technique. The Cr concentration distribution in semi-insulating GaAs substrates determined by the present method agrees with the tendency expected from the crystal growth condition. The present method would be very useful for ion implantation used in GaAs IC fabrication.Keywords
This publication has 2 references indexed in Scilit:
- Compensation mechanism in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometryIEEE Transactions on Electron Devices, 1982
- Effect of Cr Concentration on Electrical Properties of Cr-Doped Semi-Insulating GaAs SubstratesJapanese Journal of Applied Physics, 1981