SOI formation from amorphous silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing
- 1 January 1999
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 112-113
- https://doi.org/10.1109/soi.1999.819878
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High-Performance Low-Temperature Poly-Silicon Thin Film Transistors Fabricated by New Metal-Induced Lateral Crystallization ProcessJapanese Journal of Applied Physics, 1998
- Fabrication of high-mobility p-channel poly-Si thin film transistors by self-aligned metal-induced lateral crystallizationIEEE Electron Device Letters, 1996
- Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallizationIEEE Electron Device Letters, 1996