Secondary ion yield matrix effects in SIMS depth profiles of Si/Ge multilayers
- 1 November 1989
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 14 (11) , 771-780
- https://doi.org/10.1002/sia.740141114
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Properties of multilayers for soft X-ray opticsSuperlattices and Microstructures, 1988
- A simple and inexpensive ion beam sputter deposition systemJournal of Vacuum Science & Technology A, 1987
- Generation and applications of non-destructive pulsed magnetic fieldIEEE Transactions on Magnetics, 1987
- Dependence of interface widths on ion bombardment conditions in secondary ion mass spectrometric analysis of a nickel/chromium multilayer structureAnalytical Chemistry, 1987
- Characterization of NBS Standard Reference Material 2135 for sputter depth profile analysisJournal of Vacuum Science & Technology A, 1985
- Beam-induced broadening effects in sputter depth profilingVacuum, 1984
- Oxygen-concentration dependence of secondary ion yield enhancementSurface Science, 1981
- Implantation and ion beam mixing in thin film analysisNuclear Instruments and Methods, 1981
- Depth profiling by secondary ion mass spectrometryScanning, 1980
- Model calculation of ion collection in the presence of sputteringRadiation Effects, 1976